2026-10-14T15:45:31Z https://www.scidb.cn/oai

10.57760/sciencedb.00zv9 2026-08-20T15:13:34Z

2026-08-20 Cross-Temperature Threshold-Voltage Distribution Dataset for 3D TLC NAND Flash Memory doi:10.57760/sciencedb.00zv9 en This dataset contains experimental data used to investigate the cross-temperature characteristics of 3D TLC NAND Flash memory. Threshold-voltage distributions were collected under different programming and read-temperature conditions. The distributions were processed to extract characteristic parameters for different programmed states and word-line locations, which were further used to analyze the temperature coefficient (Tco) and its dependence on NAND Flash states and physical locations. The dataset supports the modeling and validation of a read-reference-voltage compensation method for improving cross-temperature read reliability in 3D TLC NAND Flash memory. The corresponding results are reported in the paper “Model-Based Read-Reference-Voltage Compensation for Cross-Temperature Reliability in 3D TLC NAND Flash Memory.” 3D NAND Flash; TLC NAND Flash; Threshold-Voltage Distribution; Cross-Temperature Reliability; Temperature Coefficient; Read Reference Voltage luo cheng Zhao Qianqi Dong Minghui Ke Yicheng Chen Wangyong Yang Ying Wang Qi Huo Zongliang RESTRICTED dataset Science Data Bank