2026-10-14T09:25:11Z https://www.scidb.cn/oai

10.57760/sciencedb.0129w 2026-09-10T14:50:33Z

2026-09-10 Sliding Wear Behavior and Material Removal Mechanism of Single Crystal 3C-SiC Based on Molecular Dynamics Method doi:10.57760/sciencedb.0129w en  Malfunctions and noise associated with moving components in micro/nano-electro-mechanical systems (MEMS/ NEMS) are often caused by wear, which can seriously reduce the service life of such systems. In this work, the horizontal friction force curve, atomic displacement amplitude, number of worn atoms, total dislocation length, von Mises stress, hydrostatic stress, and temperature field distribution of 3C-SiC were compared and analyzed using classical molecular dynamics by varying indentation depth, temperature, crystal plane, and sliding velocity.Results show that the wear process of 3C-SiC includes two stages, namely the running-in stage and the stable material removal stage. The wear mechanism can be described as follows: the region where the indenter is in close contact with the SiC substrate is subjected to combined high stress and high temperature, which damages the bonding forces within 3C-SiC and accelerates the formation and accumulation of wear debris.The position of atomic wear accumulation varies noticeably with different 3C-SiC crystal planes along the sliding direction. Worn atoms accumulate directly in front of the indenter on the (111) plane, on the right side of the indenter on the (001) plane, and on both sides of the contact edge on the (110) plane. As temperature increases from 1 K to 800 K, the number of worn atoms rises; in contrast, the number of atoms generated by friction exhibits a decreasing trend with increasing sliding speed. In addition, the (110) surface produces more worn atoms than the (001) and (111) surfaces. The subsurface damage of 3C-SiC during wear is positively correlated with von Mises stress and concentrated hydrostatic stress. Subsurface regions tend to experience stress concentration, which induces the nucleation, slip, and propagation of dislocations.These findings provide a theoretical basis for improving the durability, reliability, and stability of third-generation semiconductor devices in micro/nano-electro-mechanical systems and for extending their service life. nanowear; 3C-SiC; atomic scale; plastic removal; molecular dynamics simulation Zou Xiaolian Chen Jingjing PUBLIC https://creativecommons.org/licenses/by-nc-nd/4.0/ dataset http://www.doi.org/10.16078/j.tribology.2026026 Science Data Bank