2026-10-06T19:28:14Z https://www.scidb.cn/oai

10.57760/sciencedb.012g5 2026-09-14T08:38:41Z

2026-09-14 High-Performance MOS Structures Based on Ni/Y2O3/4H-SiC for Advanced Alpha Particle Detection doi:10.57760/sciencedb.012g5 en This dataset contains the experimental and analytical data supporting the research article on Ni/Y2O3/n-4H-SiC radiation detector structures.The data include:Current-voltage (I-V) characteristics of the fabricated Ni/Y2O3/n-4H-SiC structures and the reference benchmark Schottky detector (fabricated without an oxide layer)Capacitance-voltage (C-V) and conductance measurementsSpectroscopic radiation detection measurements, including pulse height spectra, charge collection efficiency (CCE), and energy resolution (FWHM) as a function of reverse bias voltage.XRD and XPS spectraAll data files are provided in plain-text format with labeled columns and standard physical units, corresponding to the results and figures presented in the published manuscript. 4H-SiC; Y2O3; MOS detector; alpha-particle spectroscopy Marcel Talacko Bohumir Zatko Edmund Dobročka Matej Mičušík PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset Science Data Bank