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    <identifier>10.57760/sciencedb.02311</identifier>
    <datestamp>2022-08-25T16:21:55Z</datestamp>
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  <dc:date>2022-08-25</dc:date>
  <dc:title>High laser damage threshold reflective optical-addressed liquid crystal light valve based on GaN conductive electrode</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.02311</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>In this Letter, the feasibility of the high laser damage threshold liquid crystal spatial light modulator (LC-SLM) based on gallium nitride (GaN) transparent conductive electrode is proved. The laser induced damage threshold (LIDT) is measured, and a high LIDT reflective optical-addressed liquid crystal light valve (OALCLV) based on GaN is designed and fabricated. The proper work mode of the OALCLV is determined, and the OALCLV obtained a maximum reflectivity of about 55%, an on-off ratio of 55:1 and image response is demonstrated.</dc:description>
  <dc:subject>Liquid crystal; OALCLV; Gallium Nitirde; LIDT</dc:subject>
  <dc:creator>Xing Zhibo</dc:creator>
  <dc:creator>Fan Wei</dc:creator>
  <dc:creator>Huang Dajie</dc:creator>
  <dc:creator>Cheng He</dc:creator>
  <dc:creator>Du Tongyao</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/publicdomain/zero/1.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
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