2026-10-13T10:22:53Z https://www.scidb.cn/oai

10.57760/sciencedb.03284 2022-11-24T17:07:14Z

2022-11-24 Single crystal growth of GaSe via bismuth flux method and its air-stability doi:10.57760/sciencedb.03284 en Gallium selenide (GaSe) shows potential applications in photoelectric fields. Herein, we successfully synthesized GaSe single crystal with large size via improved Bi-flux method. X-ray diffraction pattern and energy dispersive spectrum show the high crystallinity and high homogeneity of GaSe crystal. Optical absorption and photoluminescence measurements illustrate the band gap of the crystal is ~ 2 eV. Photocurrent behavior demonstrates the photoelectric response time is determined to be 2.08 s. The time dependent Raman spectrum shows that GaSe grown by Bi-flux method degenerates slowly under continuous air-exposure. This effective new growth method would be helpful for photoelectric device and two-dimensional materials study based on GaSe.   Flux method; Semiconductor; Two-dimensional materials Weiwei Chu Jiyong Yang Liang Li zhu xiang de Mingliang Tian mltian@hmfl.ac.cn PUBLIC https://creativecommons.org/licenses/by-nc/4.0/ dataset http://www.doi.org/10.1016/j.jcrysgro.2021.126088 Science Data Bank