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    <responseDate>2026-10-14T19:46:00Z</responseDate>
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    <identifier>10.57760/sciencedb.03823</identifier>
    <datestamp>2022-10-19T16:56:04Z</datestamp>
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<oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:date>2022-10-19</dc:date>
  <dc:title>Influence of irradiation-induced point defects on the dissolution and diffusion properties of hydrogen in &amp;alpha;-Al2O3: a first-principles study</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.03823</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>Alpha-alumina (&amp;alpha;-Al2O3) is considered to be an ideal candidate material for the tritium permeation barrier (TPB) with excellent tritium resistance properties. However, in a fusion reactor, the irradiation-induced defects could sum up on fabrication-induced defects so to reduce drastically the barrier performance. The underlying mechanism is still not settled. In this paper, the first-principles density functional theory (DFT) approach is used to explore the influence of irradiation-induced point defects on the dissolution and diffusion properties of hydrogen (H) in &amp;alpha;-Al2O3. [H+&amp;minus; V&amp;minus;3Al]and [H+ &amp;minus; V0O] defects have much lower formation energies at EG/2 in both Al-rich and O-rich growth environments that H atoms are easily captured by vacancy-type irradiation-induced point defects. As a result, higher H retention can be expected, which is consistent with the experimental results. Moreover, by calculating several different diffusion pathways of H-defect complexes and the corresponding diffusion coefficient, it can be inferred that H atoms and vacancy-type point defects can hardly diffuse as a bound entity. Therefore, isolated vacancy-type irradiation-induced point defects can trap multiple H atoms to form H-defect complexes and impede the diffusion process of H, which can enhance the efficiency of protection against H permeation through &amp;alpha;-Al2O3 TPB. However, the minimum diffusion barrier for OiH&amp;minus; migration to the first nearest neighbor O interstitial site is 0.44 eV, which is so low that OiH&amp;minus; can migrate quickly at room temperature. This fast diffusion pathway for H could be the underlying mechanism for the low efficiency in preventing H permeation through irradiated &amp;alpha;-Al2O3. Our results provide a sound theoretical explanation for recent experimental results of H permeation in &amp;alpha;-Al2O3 under irradiation environment.</dc:description>
  <dc:subject>defects; irradiation; first-principles; tritium permeation barrier</dc:subject>
  <dc:creator>Pan Xindong</dc:creator>
  <dc:creator>Xu Yuping</dc:creator>
  <dc:creator>Lu Dao</dc:creator>
  <dc:creator>Zhou Haishan</dc:creator>
  <dc:creator>Li Xiaochun</dc:creator>
  <dc:creator>Gao Fei</dc:creator>
  <dc:creator>Luo Guangnan</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:relation>http://www.doi.org/10.1088/1741-4326/abcf8c</dc:relation>
  <dc:publisher>Science Data Bank</dc:publisher>
</oai_dc:dc>

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