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    <identifier>10.57760/sciencedb.05716</identifier>
    <datestamp>2022-11-27T22:51:02Z</datestamp>
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<oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:date>2022-11-27</dc:date>
  <dc:title>Fabrication of the transparent ferroelectric heterostructures based on KNN-based lead-free films</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.05716</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>Transparent&amp;nbsp;and epitaxial 0.95(K0.49Na0.49Li0.02)(Ta0.2Nb0.8)O-3-0.05CaZrO(3)with 2 wt.% MnO(2)addition (KNNLT-CZM)&amp;nbsp;lead-free&amp;nbsp;ferroelectric&amp;nbsp;film&amp;nbsp;heterostructures&amp;nbsp;are fabricated&amp;nbsp;on&amp;nbsp;the&amp;nbsp;La0.07Ba0.93SnO3(LBSO)-coated SrTiO3(001) substrates using pulsed laser deposition.&amp;nbsp;The&amp;nbsp;optical measurements show that these film&amp;nbsp;heterostructures&amp;nbsp;exhibit good transmittance with a maximum transmittance&amp;nbsp;of&amp;nbsp;similar to 80%. Temperature-dependent dielectric properties demonstrate that&amp;nbsp;the&amp;nbsp;KNNLT-CZM&amp;nbsp;films&amp;nbsp;possess a high Curie temperature (T-C) above 420 degrees C, and exhibit an orthorhombic to tetragonal phase transition at similar to 170 degrees C. Furthermore, these film&amp;nbsp;heterostructures&amp;nbsp;also have a large twice remnant polarization&amp;nbsp;of&amp;nbsp;29.66 mu C cm(-2)and well-defined&amp;nbsp;ferroelectric&amp;nbsp;hysteresis loops up to 200 degrees C.&amp;nbsp;The&amp;nbsp;x-ray photoelectron spectra suggest that partial K elements did not enter in&amp;nbsp;the&amp;nbsp;lattice&amp;nbsp;of&amp;nbsp;the&amp;nbsp;KNNLT-CZM perovskite structure and&amp;nbsp;the&amp;nbsp;Mn dominantly existed in&amp;nbsp;the&amp;nbsp;form&amp;nbsp;of&amp;nbsp;Mn2+.&amp;nbsp;The&amp;nbsp;observed good transmittance, high(C) and excellent electrical properties&amp;nbsp;of&amp;nbsp;the&amp;nbsp;LBSO-buffered KNNLT-CZM film&amp;nbsp;heterostructures&amp;nbsp;indicate that these&amp;nbsp;films&amp;nbsp;have great application potential in opto-electronic devices and film transistors.</dc:description>
  <dc:subject>THIN-FILMS; ELECTRICAL-PROPERTIES; TEMPERATURE; CERAMICS; CAPACITORS; BEHAVIOR; STRAIN; MNO2</dc:subject>
  <dc:creator>Liqiang Xu</dc:creator>
  <dc:creator>Feng Chen</dc:creator>
  <dc:creator>Wenbin Wu</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:relation>http://www.doi.org/10.1088/1361-6463/ab9976</dc:relation>
  <dc:publisher>Science Data Bank</dc:publisher>
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