2026-10-14T05:22:38Z https://www.scidb.cn/oai

10.57760/sciencedb.06807 2022-12-02T18:46:38Z

2022-12-02 Laser heat-mode patterning with improved aspect-ratio doi:10.57760/sciencedb.06807 en Heat-mode lithography has received much attention owing to its capacity of breaking through the diffraction limit and realizing nano-patterning. However, the relatively lower aspect ratio of patterns seriously limits its scope of applications. In the currently available literature, the aspect ratio of submicron structures prepared by this method is less than 0.3:1. In this work, a new two-step development process was proposed to considerably improve the aspect-ratio of micro/nanostructures in the AgInSbTe (AIST) heat-mode resist. An aspect ratio of 1:1 can be kept even for the grating structures with a linewidth/period of 200nm/400nm. The developed patterns can be transferred to silicon substrates with high fidelity. This simple and effective technique addresses key issues of heat-mode lithography in the manufacture of functional nanostructures requiring high aspect ratio, such as photomasks, templets of nanoimprint, and so on.  development; crystalline domain; aspect ratio; heat-mode lithography Kui Zhang Zhengwei Wang Guodong Chen Jinlun Zheng Zhichang Mo Yang Wang Jingsong Wei PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset Science Data Bank