2026-10-14T18:24:32Z https://www.scidb.cn/oai

10.57760/sciencedb.10447 2023-08-25T09:50:08Z

2023-08-25 Engineering Bandgap of Ternary Ag2TexS1-x Quantum Dots for Solution-processed Near-Infrared Photodetectors doi:10.57760/sciencedb.10447 en Silver-based chalcogenide semiconductors exhibit low toxicity and near-infrared optical properties and are therefore rendering them extensively employed in the field of solar cells, photodetectors and biological probes. Here, we report a facile mixture precursor hot-injection colloidal route to prepare Ag2TexS1-x ternary quantum dots (QDs) with tunable photoluminescence (PL) emissions from 950 nm to 1600 nm by alloying bandgap engineering. As a proof-of-concept application, the Ag2TexS1-x QDs-based near-infrared photodetector (PD) was fabricated by solution-processes to explore their photoelectric properties. The ICP-OES results reveal the relationship between the compositions of the precursor and the samples, which is consistent with Vegard’s equation. Alloying broadened the absorption spectrum and narrowed the bandgap of the Ag2S QDs. The UPS results demonstrate the energy band alignment of the Ag2Te0.53S0.47 QDs. The solution-processed Ag2TexS1-x QD-based PD exhibited a photoresponse to 1350 nm illumination. With an applied voltage of 0.5 V, the specific detectivity is 0.91×1010 Jones and the responsivity is 0.48 mA/W. The PD maintained a stable response under multiple optical switching cycles, with a rise time of 2.11 s and a fall time of 1.04 s, which indicate excellent optoelectronic performance. Ag2TexS1-x QDs; bandgap engineering; photodetectors; ternary alloying Zan Wang Daniil Aleksandrov Yunjiao Gu Fenghua Liu Weiping Wu PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset Science Data Bank