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    <identifier>10.57760/sciencedb.13619</identifier>
    <datestamp>2024-09-20T09:32:16Z</datestamp>
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  <dc:date>2024-09-20</dc:date>
  <dc:title>Current-voltage characteristics of memristive devices obtained under ion irradiation</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.13619</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>This dataset contains current-voltage characteristics of ZrO2(Y)-based memristive devices irradiated with H⁺, Ne⁺, O⁺, and Kr⁺ ions, as well as control (non-irradiated) devices.</dc:description>
  <dc:subject>current-voltage characteristics; memristor; radiation tolerance; yttria-stabilized zirconia</dc:subject>
  <dc:creator>Maria Koryazhkina</dc:creator>
  <dc:creator>Alexey Mikhaylov</dc:creator>
  <dc:creator>Davud Guseinov</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by-nc-sa/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:relation>http://www.doi.org/10.1016/j.chaos.2024.115909</dc:relation>
  <dc:publisher>Science Data Bank</dc:publisher>
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