2026-10-14T12:26:44Z https://www.scidb.cn/oai

10.57760/sciencedb.14092 2024-01-12T13:01:26Z

2024-01-12 A high-gain cladded waveguide ampliﬁer on erbium doped thin-ﬁlm lithium niobate fabricated using photolithography assisted chemomechanical etching doi:10.57760/sciencedb.14092 en Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the microto-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide ampliﬁer fabricated on the thin ﬁlm lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique.Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI ampliﬁer pumped by the diode laser at &sim;980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad ampliﬁer, which is further explained by the theoretical modeling of the LNOI ampliﬁer including the guided mode structures and the steady-state response of erbium ions. integrated waveguide amplifier ; lithium niobate nanophotonics; hotolithography assisted chemomechanical etching Youting Liang Junxia Zhou Zhaoxiang Liu Haisu Zhang Zhiwei Fang Yuan Zhou Difeng Yin Jintian Lin Jianping Yu Rongbo Wu Min Wang Ya Cheng PUBLIC https://creativecommons.org/licenses/by-nc-nd/4.0/ dataset http://www.doi.org/https://doi.org/10.1515/nanoph-2021-0737 Science Data Bank