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    <responseDate>2026-10-14T14:41:20Z</responseDate>
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    <identifier>10.57760/sciencedb.18891</identifier>
    <datestamp>2025-04-25T09:45:27Z</datestamp>
</header>
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<oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:date>2025-04-25</dc:date>
  <dc:title>Liquid-like Slippery Dielectric Surfaces Boosting Electrical Performance of Organic Field-Effect Transistors</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.18891</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>Interfacial engineering is essential for optimizing thin-film device performance with rapid advancements in artificial intelligence and neuromorphic devices. However, dynamic wettability&amp;mdash;rather than static wettability&amp;mdash;has largely been overlooked, hampering the diversity of interfacial engineering. Here, liquid-like slippery surfaces, a unique type of super-wetting surfaces with exceptional dynamic hydrophobicity, were decorated for the first time at semiconductor/dielectric interfaces. For systematic investigation, a series of siloxane-based molecular layers with varied sliding properties, including liquid-like slippery surfaces, were modified on SiO2 dielectric layers, and compared with conventional trichlorooctadecylsilane (OTDS) surfaces. These surfaces were incorporated into organic field effect transistors (OFETs) featuring a high-performance liquid crystal organic semiconductor (OSC), 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12), to evaluate interfacial wettability, OSC growth, device electrical performance, and interrelated dynamics. The resulting OFETs with slippery surfaces demonstrated mobilities (3.90 cm2V&amp;ndash;1s&amp;ndash;1) nearly threefold as high as those with ODTS. A strong correlation was established among interface wettability, OSC film morphologies and enhanced device performance: The improved dynamic wettability, combined with thermal annealing, modulates the morphology, facilitates molecular packing and phase transition of the vacuum-sublimed OSC, enhancing charge transport of devices. This provides valuable insights into leveraging high dynamic wettability to optimize electronic performance and facilitate the fabrication of thin-film devices.</dc:description>
  <dc:subject>slippery; interfacial; transistors</dc:subject>
  <dc:creator>Yunjiao Gu</dc:creator>
  <dc:creator>Can Li</dc:creator>
  <dc:creator>Minrui He</dc:creator>
  <dc:creator>He Zhou</dc:creator>
  <dc:creator>Shuxue Zhou</dc:creator>
  <dc:creator>Weiping Wu</dc:creator>
  <dc:rights>RESTRICTED</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
</oai_dc:dc>

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