2026-10-14T13:23:25Z https://www.scidb.cn/oai

10.57760/sciencedb.21492 2025-02-28T15:14:24Z

2025-02-28 Silver Telluride Quantum Dots on Silicon Near-Infrared Photodetectors doi:10.57760/sciencedb.21492 en Ag2Te quantum dots (QDs) are narrow-bandgap, heavy metal-free QDs with significant potential for near-infrared detection. In this study, we fabricated a silicon-based Ag2Te QD near-infrared photodetector to assess its feasibility for large-scale silicon-based integration. The Ag2Te QDs were synthesized via thermal injection, achieving a size of 5 nm and a bandgap of 0.73 eV. These narrow bandgap Ag2Te QDs were successfully deposited onto silicon wafers following ligand exchange. At room temperature, the QD photodetector demonstrated a high responsivity of 150 A/W and a specific detectivity of 2.3×1010 Jones under 1050 nm illumination. Additionally, we investigated the effects of electrode positioning and QD film thickness on device performance, establishing a foundation for the low-cost, large-scale integration of the narrow-bandgap QD materials with the silicon platform. quantum dots; infrared photodetectors; quantum efficiency; solution-processed colloidal QDs; printed electronics Mao Chenlu Yao Fulong Daniil Aleksandrov Liu Fenghua Wu Weiping PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset http://www.doi.org/10.1021/acsami.5c01857 Science Data Bank