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    <identifier>10.57760/sciencedb.22189</identifier>
    <datestamp>2025-04-03T16:00:03Z</datestamp>
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  <dc:date>2025-04-03</dc:date>
  <dc:title>SESAM mode-locked Yb:GdScO3 laser</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.22189</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>We report on the investigation of continuous-wave (CW) and SEmiconductor Saturable Absorber Mirror (SESAM) mode-locked operation of a Yb:GdScO3 laser. Using a single-transverse-mode, fiber-coupled InGaAs laser diode at 976&amp;nbsp;nm as a pump source, the Yb:GdScO3 laser delivers 343&amp;nbsp;mW output power at 1062&amp;nbsp;nm in the CW regime, which corresponds to a slope efficiency of 52%. A continuous wavelength tuning of this laser across 84&amp;nbsp;nm (1027&amp;nbsp;&amp;ndash;&amp;nbsp;1111&amp;nbsp;nm) is achieved. By implementing a commercial SESAM to initiate and stabilize the soliton-type pulse shaping, the Yb:GdScO3 laser generates soliton pulses as short as 42&amp;nbsp;fs at 1065.9&amp;nbsp;nm with an average output power of 40&amp;nbsp;mW at 66.89&amp;nbsp;MHz. To the best of our knowledge, this represents the first demonstration of passively mode-locked operation of the Yb:GdScO3 crystal.</dc:description>
  <dc:subject>mode-locking;  femtosecond laser; SESAM</dc:subject>
  <dc:creator>Jie Guo</dc:creator>
  <dc:creator>Shanming Li</dc:creator>
  <dc:creator>Chengchun Zhao</dc:creator>
  <dc:creator>Yin Hang</dc:creator>
  <dc:creator>Huangjun Zeng</dc:creator>
  <dc:creator>Zhanglang Lin</dc:creator>
  <dc:creator>Ge Zhang</dc:creator>
  <dc:creator>GHASSEN ZIN ELABEDINE</dc:creator>
  <dc:creator>XAVIER MATEOS</dc:creator>
  <dc:creator>PAVEL LOIKO</dc:creator>
  <dc:creator>VALENTIN PETROV</dc:creator>
  <dc:creator>Weidong Chen</dc:creator>
  <dc:creator>Xiaoyan Liang</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by-nc/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
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