2026-10-14T20:17:16Z https://www.scidb.cn/oai

10.57760/sciencedb.23558 2025-04-17T09:26:23Z

2025-04-17 Upsetting SRAM units with laser-driven nanosecond proton flash doi:10.57760/sciencedb.23558 en Investigating the radiation effects on semiconductor chips is critical for assessing and ensuring the reliable operation of space-based electronic systems. We present the first proof-of-principle demonstration of radiation effects on Static Random-Access Memory (SRAM) chips utilizing high flux nanosecond proton beam driven by a femtosecond intense laser pulse. A quasi-monoenergetic proton beam centered at around 8 MeV with a pulse duration of 2.35 ns is delivered to the SRAM chips, achieving peak flux of 10¹⁷ ions/cm²/s. The observed SRAM upset cross-section approaching 10-13 cm²/bit, exhibiting a 2-3.5× enhancement compared to the ones tested on conventional accelerator. This result demonstrates capability of radiation tests of laser-driven ultrashort proton flashes and may lead to a new paradigm for ultrafast dynamics of silicon-based devices under extreme radiation conditions. laser-driven ion acceleration; radiation effects; proton flash Dirui Xu Hui Zhang Angxiao Li Shun Li Yunwei Cui Yingzi Dai Chengyu Qin Rongjie Xu Jinfeng Li Xiaoming Lu Jiantou Gao Linfei Wang Chunlin Wang Bo Li Yuxin Leng Weibiao chen Baifei Shen Liangliang Ji Ruxin Li PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset Science Data Bank