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    <identifier>10.57760/sciencedb.24439</identifier>
    <datestamp>2025-05-06T15:46:12Z</datestamp>
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  <dc:date>2025-05-06</dc:date>
  <dc:title>Edge-contacted MoTe2-NbS2 heterojunction photodetectors with high-performance, self-powered and stable broadband detection based on optical manipulation preparation</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.24439</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>&amp;nbsp;Photodetectors, as fundamental components of modern optoelectronic systems, hold significant potential across various domains including communications, healthcare, and military reconnaissance. Heterojunctions play a crucial role in enhancing carrier separation through interface energy band engineering, thereby enabling high-performance detection. Furthermore, metal&amp;ndash;semiconductor edge contacts can further optimize device performance, though conventional fabrication methods are often complex, time-consuming, and risk inducing material damage. We proposed a novel approach for realizing edge contact between 2D semiconductors and metals by using femtosecond laser-driven nanosheets moving on a substrate. MoTe₂ and NbS₂ nanosheets were precisely assembled into edge-contact heterojunction photodetectors by combining dry transfer techniques with optical manipulation. The device exhibited excellent responsivity (2 A/W), specific detectivity (1.36&amp;times;10⁸ Jones), and quantum efficiency (278%) at 900 nm. Additionally, the photodetectors exhibited fast response times of 30/46 &amp;mu;s, a response bandwidth of 5.4 kHz, making it suitable for high-speed optical signal detection. Significantly, the detectors showed broadband optical response spanning 280&amp;ndash;1380 nm, with a stable responsivity maintained between 280 and 1200 nm.&amp;nbsp;The optical manipulation scheme also provides new solutions for the preparation of transverse heterojunction, customized edge-contact structure, and modulation of heterojunction junction area, which injects new momentum for the development of future optoelectronic devices</dc:description>
  <dc:subject>optical manipulation; photodetector; edge-contact; heterojunction; two-dimensional material</dc:subject>
  <dc:creator>Wang Yan</dc:creator>
  <dc:creator>He Jiajing</dc:creator>
  <dc:creator>Hu Yibiao</dc:creator>
  <dc:creator>Xu Chang</dc:creator>
  <dc:creator>Mao Yu</dc:creator>
  <dc:creator>Dong Ningning</dc:creator>
  <dc:creator>Wang Jun</dc:creator>
  <dc:rights>RESTRICTED</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
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