2026-10-14T20:03:55Z https://www.scidb.cn/oai

10.57760/sciencedb.29401 2025-08-29T11:37:08Z

2025-08-29 2.87 kV/3.68 mΩ·cm2 Low Forward Voltage Ga2O3 Vertical SBD with Nitrogen-Doped Protecting Ring and Mesa Termination doi:10.57760/sciencedb.29401 en In this paper, a vertical Ga2O3 Schottky barrier diode (SBD) with nitrogen (N)-doped protecting ring and mesa termination (NMT-SBD) is fabricated. In addition to the electric field optimization effect of the mesa termination, the NMT-SBD also features the N-doped protecting ring to reduce the electric field near the anode edge. This further increases the breakdown voltage (BV) and enables the Ni/Ga2O3 contact with a low barrier height to be used as the anode, leading to a low forward voltage (VF). The experimental results show that the device achieves a BV of 2.87 kV and a specific on resistance of 3.68 mΩ·cm2, resulting in a high PFOM of 2.24 GW/cm2. Furthermore, the device exhibits a low VF (@100 A/cm2) of 1.3 V, confirming its excellent performance with low conduction loss. This work demonstrates a promising strategy for fabricating high-power Ga2O3 vertical Schottky barrier diode. Ga2O3; Schottky barrier diode; termination 韩学历 许晓锐 王正波 杨瀚超 陈得森 邓逸聪 陈端阳 张海忠 齐红基 RESTRICTED dataset http://www.doi.org/10.1063/5.0276560 Science Data Bank