2026-10-15T04:28:11Z https://www.scidb.cn/oai

10.57760/sciencedb.29407 2025-08-29T11:37:20Z

2025-08-29 Ga2O3 Vertical SBD With Suspended Field Plate Assisted Shallow Mesa Termination for Multi-kilovolt and Ampere-class Applications doi:10.57760/sciencedb.29407 en In this work, a vertical Ga2O3 Schottky barrier diode with suspended field plate assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specific on-resistance of 5.77 mΩ∙cm2 are achieved, resulting in a power figure of merit >2.12 GW/cm2. Furthermore, the large-area device with 3×3 mm2 is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multi-kilovolt and ampere-class applications. Gallium oxide; Schottky barrier diode; Termination; Electric field management 韩学历 许晓锐 王正波 杨瀚超 陈得森 邓逸聪 陈端阳 张海忠 齐红基 RESTRICTED dataset http://www.doi.org/10.1109/TED.2025.3584011 Science Data Bank