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    <identifier>10.57760/sciencedb.32837</identifier>
    <datestamp>2025-12-05T16:11:47Z</datestamp>
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  <dc:date>2025-12-05</dc:date>
  <dc:title>The novel hysteresis loop formed and modulated by the built-in electric field with magnetic elements in NaNbO3-based ceramics</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.32837</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>The effect of magnetic element doping on dielectric properties and ferroelectric polarization reversal in (1-x)NaNbO3-xNdFeO3 ceramics was investigated. A novel Polarization-Electric Field (P-E) loop was discovered with its direction of maxi polarization opposing the applied electric field. The phenomenon and negative dielectric constant from 9920 to 7990 maybe arise from a built-in electric field generated by interfacial barrier-limited carrier transport and nanoscale ions segregation on domain walls. The results establish a substitution-level-dependent competition mechanism between domain-wall-localized polarization and bulk conduction. It may be provide a novel method of defect engineering on switching devices tuned by built-in electric field.</dc:description>
  <dc:subject>Ferroelectrics; Hysteresis loop; Dielectric; Domain wall</dc:subject>
  <dc:creator>Han Zheng</dc:creator>
  <dc:creator>Dongxu Pan</dc:creator>
  <dc:creator>Zhang Ling</dc:creator>
  <dc:creator>Li Zhengfa</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by-nc/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
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