2026-10-13T04:05:19Z https://www.scidb.cn/oai

10.57760/sciencedb.37936 2026-06-01T17:44:04Z

2026-06-01 20nm channel Length In As DGTFET and propsoed InAs-SE-DGTFET doi:10.57760/sciencedb.37936 en The uploaded dataset contains CSV files of transfer characteristics, output characteristics and PIN forward leakage current characteristics, along with DAT files corresponding to energy-band diagrams, lateral electric-field profiles, and total current-density distributions used for the physical analysis and validation of the proposed SE-DGTFET architecture. The dataset also includes supporting simulation data employed for electrostatic interpretation and circuit-level assessment of the proposed device. TFET; PIN forward leakage current; TFET based DRAM SYED AFZAL AHMAD RESTRICTED dataset Science Data Bank