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    <responseDate>2026-10-12T22:47:36Z</responseDate>
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    <identifier>10.57760/sciencedb.38333</identifier>
    <datestamp>2026-06-01T14:14:14Z</datestamp>
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<oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:date>2026-06-01</dc:date>
  <dc:title>Low-loss silicon photonic electro-optic modulator based on high mobility Mo-doped In2O3 thin films</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.38333</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>Analyze the crystal structure and phase composition of the thin film using X-ray diffraction (XRD); The surface morphology and microstructure of the thin film were observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM), while the cross-sectional morphology and grain size distribution of the sample were further analyzed using transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) is used to detect the chemical states of various elements and the valence states of doped elements in thin films. In terms of optical performance, the transmission spectrum of the film was measured using a UV visible spectrophotometer, and the optical bandgap was fitted based on the Tauc formula; In addition, a Z-scan experimental platform was established to characterize the nonlinear optical properties of thin films.&amp;nbsp;</dc:description>
  <dc:subject>SEM; XRD; XPS; TEM</dc:subject>
  <dc:creator>Deng Honghua</dc:creator>
  <dc:creator>Wu Yi</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by-nc-nd/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:publisher>Science Data Bank</dc:publisher>
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