2026-10-14T13:20:13Z https://www.scidb.cn/oai

10.57760/sciencedb.41543 2026-07-09T10:47:50Z

2026-07-09 Performance Analysis of Ga2O3–Si Schottky Diodes Based on Bonding Technology doi:10.57760/sciencedb.41543 en To improve the thermal management and structural reliability of Ga2O3 power devices under high-voltage operation, a Ga2O3–Si Schottky barrier diode (SBD) structure is proposed based on heterogeneous bonding. The structure integrates Ga2O3 and Si using surface activated bonding (SAB), and its rectification performance is experimentally verified. Based on the measured results, TCAD simulations are conducted to investigate the effects of SiO2 edge passivation, Ga2O3 layer thickness, and interface trap density on current density, electric field, thermal distribution, and breakdown behavior. The results indicate that the passivation structure concentrates field distribution near the Schottky contact and increases breakdown voltage. With a 25 μm Ga2O3 layer, the breakdown voltage reaches 6 kV, and heat is effectively dissipated through the bonded interface. High interface trap densities cause Fermi-level pinning and limit current injection. This work provides modeling methods and design guidance for the electro-thermal optimization of Ga2O3-based power devices. Bonding Process; Gallium Oxide; TCAD; Schottky Barrier Diode(SBD); Interface Trap Density Zhao Shiqi Changhudong Chen Yu Sun Bing Cen Lizhao Wang Xinhua Liu Xinyu PUBLIC https://creativecommons.org/licenses/by-nc/4.0/ dataset Science Data Bank