2026-10-13T10:21:14Z https://www.scidb.cn/oai

10.57760/sciencedb.43166 2026-07-28T14:37:33Z

2026-07-28 Data for: A Stress-Recovered Bottom Dielectric Isolation Scheme for GAA Nanosheet Transistors with Self-Aligned Backside Contact Integration doi:10.57760/sciencedb.43166 en This dataset provides the supporting data for the article “A Stress-Recovered Bottom Dielectric Isolation Scheme for GAA Nanosheet Transistors with Self-Aligned Backside Contact Integration” published in Microelectronics Journal. The dataset includes raw numerical data and original figures used for device- and circuit-level evaluation of standard GAA, Full-BDI, and SR-BDI nanosheet transistors. The numerical files include transfer characteristics, carrier mobility, RO results, SRAM performance metrics, and related comparison data obtained from TCAD and circuit-level simulations. These data support the analysis of channel stress recovery, drive-current enhancement, capacitance reduction, and RO/SRAM performance improvements enabled by the proposed SR-BDI architecture. GAA nanosheet transistor; bottom dielectric isolation; SR-BDI; backside contact integration; TCAD simulation; channel stress shiqi cao liuhaoyan Yongliang Li RESTRICTED dataset Science Data Bank