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    <identifier>10.57760/sciencedb.hep.00008</identifier>
    <datestamp>2026-05-25T14:41:24Z</datestamp>
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  <dc:date>2026-05-25</dc:date>
  <dc:title>Supplyment to the article&amp;quot;Layered group-IV-V-VI semiconductors with superior piezoelectricity and ferroelectricity&amp;quot;</dc:title>
  <dc:identifier>doi:10.57760/sciencedb.hep.00008</dc:identifier>
  <dc:language>en</dc:language>
  <dc:description>Supplyment to the article&amp;quot;Two-dimensional (2D) layered materials lacking inversion symmetry are promising candidates for nano-electromechanical and electronic technologies. Building upon the experimentally synthesized SnP2 Se6 crystal, we computationally propose a novel series of inherently asymmetric group-IV-V-VI semiconductors through elemental substitution. This series encompasses monolayers of SiP2 Se6 , SiAs2 S6 , SiAs2 Se6 , SiAs2 Te6 , GeP2 S6 , GeP2 Se6 , GeAs2 S6 , GeAs2 Se6 , GeSb2 S6 , SnP2 S6 , SnP2 Se6 , SnAs2 S6 , SnAs2 Se6 , SnAs2 Te6 and SnSb2 S6 . All these structures exhibit robust energetic and dynamic stability, along with excellent resistance to oxidation when exposed to air. These monolayers have moderate bandgaps ranging from 1.04 to 2.36 eV; notably, the monolayers of SiAs2 Se6 , SiAs2 Te6 , GeP2 S6 , GeAs2 Se6 and SnAs2 Te6 are direct-bandgap semiconductors. More importantly, these group-IV-V-VI monolayers exhibit significant in-plane piezoelectricity, with coefficients (d11) as high as 22.94 pm/V. Additionally, SnP2 Se6 bilayer exhibit significant out-of-plane piezoelectricity (d33) with coefficients exceeding 5 pm/V. Moreover, the coexistence of room-temperature ferroelectricity in these monolayers is unambiguously confirmed by their intrinsic spontaneous polarization and remarkably low ferroelectric switching barriers. These findings establish a new paradigm for integrating piezoelectricity and ferroelectricity with diverse 2D materials, thereby opening exciting opportunities for designing multifunctional materials and developing novel electronic devices.&amp;quot;</dc:description>
  <dc:subject>piezoelectricity; ferroelectricity; layered group-IV-V-VI semiconductors; non-centrosymmetry</dc:subject>
  <dc:creator>Yu Guo</dc:creator>
  <dc:creator>Jijun Zhao</dc:creator>
  <dc:creator>Yan Su</dc:creator>
  <dc:creator>Lixin Zhou</dc:creator>
  <dc:rights>PUBLIC</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/</dc:rights>
  <dc:type>dataset</dc:type>
  <dc:relation>http://www.doi.org/10.15302/frontphys.2026.095202</dc:relation>
  <dc:publisher>Science Data Bank</dc:publisher>
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