2026-10-11T02:10:59Z https://www.scidb.cn/oai

10.57760/sciencedb.hjs.00626 2026-02-05T09:48:50Z

2026-02-05 Research Dataset on Proton Single-Event Effects in SRAM-based FPGAs Fabricated with 16nm FinFET Technology doi:10.57760/sciencedb.hjs.00626 en Irradiation Test Site: Proton Accelerator, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of SciencesIrradiation Test Period: December 2024 - July 2025Irradiation Test Samples: Xilinx Virtex UltraScale+ XCVU3P FFVC1517AAZ FPGA chips manufactured by AMD Inc.Test System: QDRPOT1GC Control and Communication SystemIrradiation Test Data Acquisition: The single event upset and single event latch-up data of the devices were obtained through online monitoring.Simulation Content: Monte Carlo simulation was performed with Geant4 software to acquire the charge deposition information induced by the bombardment of the chips by protons with different energies; TCAD software was used to conduct the simulation of single event latch-up effect of 16 nm FinFET 1.8 V I/O devices, and the simulation results of transient current response of the devices under different LET conditions were obtained.Data Processing and Presentation: Graph plotting was carried out with Origin software. Single Event Upset (SEU); Single Event Latch-up (SEL); Monte Carlo; FPGA (Field Programmable Gate Array); 16 nm FinFET luo zi kang Zheng Qiwen Shi Chengcheng Cui Jiangwei Shi Weilei Guo Qi Li Yudong RESTRICTED dataset Science Data Bank