2026-10-14T13:24:40Z https://www.scidb.cn/oai

10.57760/sciencedb.j00113.00055 2022-11-16T10:13:13Z

2022-11-16 Supplementary materials for the article “Study on the field-effect WSe2/Si heterojunction diode” doi:10.57760/sciencedb.j00113.00055 en Supplementary materials for the article “Study on the field-effect WSe2/Si heterojunction diode” published in the journal Chinese Physics B. The materials include experimental details and detailed calculation method for the ideality factor. They also include figures of Fig. S1 (schematic device fabrication process), Fig. S2 (AFM images), Fig. S3 (scatting points of R and D* dependent on the light power density P), Fig. S4 (curves of Iph and RT dependent on the bias voltage Vds with Vg = 5 V, scatting points of Iph dependent on the light power density with Vg = 5 V, and scatting points of R and D* dependent on the light power density with Vg = 5 V), Fig. S5 (curves of Iph and RT dependent on the bias voltage Vds with Vg = -5 V, scatting points of Iph dependent on the light power density with Vg = -5 V and scatting points of R and D* dependent on the light power density with Vg = -5 V) and Fig. S6 (transfer characteristic curve of the Si sheet FET at Vds = 0.1 V). experimental details; calculation method for the ideality factor; additional data Rui Yu(余睿) Zhe Sheng(盛喆) Wennan Hu(胡文楠) Yue Wang(王越) Jianguo Dong(董建国) Haoran Sun(孙浩然) Cheng Zengguang(程增光) zhang zeng xing PUBLIC https://creativecommons.org/licenses/by/4.0/ dataset http://www.doi.org/10.1088/1674-1056/ac9049 Science Data Bank