2026-10-13T17:25:57Z https://www.scidb.cn/oai

10.57760/sciencedb.j00186.00905 2025-12-25T09:49:39Z

2025-12-25 Dataset for the Study of Radiation-Hardened 60V Trench MOSFETs doi:10.57760/sciencedb.j00186.00905 en This article provides the dataset accompanying the paper titled " Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation." The dataset comprises the numerical data corresponding to Figures 7–10, 12, and 14–15 in the paper. It is intended to assist readers in reproducing the graphical results presented in the publication and to facilitate further comparative analysis and data reuse. Trench MOSFET; Single-event burnout (SEB); Total ionizing dose (TID); Hardened structure; Lattice temperature De-Xin Chen Ying Wang Huo-Lin Huang Yan-Xing Song Meng-Tian Bao Fei Cao RESTRICTED dataset Science Data Bank