2026-10-12T10:13:41Z https://www.scidb.cn/oai

10.57760/sciencedb.j00273.00024 2026-05-07T11:03:02Z

2026-05-07 Investigation of data retention in hafnium-based ferroelectric memory devices doi:10.57760/sciencedb.j00273.00024 en This dataset contains the original current-voltage (I-V) characterization data of hafnium-based ferroelectric memory devices with an initial downward polarization, after being held for 1000 s at three temperatures of 25 °C, 85 °C and 125 °C. All data were collected by a Keysight B1530 semiconductor parameter analyzer and stored in MATLAB (.mat) format. The polarization-voltage (P-V) hysteresis loops can be obtained by performing time integration on the measured current data, which is adopted to investigate the imprint effect of ferroelectric memories during high-temperature retention. hafnium oxide; ferroelectric memory; anti-ferroelectric memory; data retention Lin Yunxue Chen Lijian Qi Jiabin Weng Zeping Qu Yiming PUBLIC https://api.github.com/licenses/cc0-1.0 dataset http://www.doi.org/10.3724/jfmd.2509071 Science Data Bank