2026-10-12T18:19:40Z https://www.scidb.cn/oai

10.57760/sciencedb.jim.00019 2026-03-20T09:54:50Z

2026-03-20 One-Step Synthesis of Non-Layered 2D Bi2WO6 Nanosheets for electronics and optoelectronics doi:10.57760/sciencedb.jim.00019 en Since the discovery of graphene, two-dimensional (2D) materials have been a research hotspot. 2D semiconductor materials, with their atomic-level thickness and excellent electronic and optoelectronic properties, are considered ideal semiconductor materials. However, van der Waals materials account for only 5% of the crystal structure database, resulting in a limited number of 2D materials to be studied, which restricts their development and application. The development of non-van der Waals 2D materials will greatly enrich the family of 2D semiconductor materials. However, the two-dimensional growth of non-van der Waals materials remains a significant challenge, as conventional synthesis methods struggle to limit their growth in three dimensions. This study developed a one-step chemical vapor deposition method to grow non-van der Waals 2D Bi2WO6 nanosheets on C-plane sapphire with an average size of 60 μm. Furthermore, the thickness of the 2D Bi2WO6 nanosheets was precisely controlled by adjusting the growth parameters. The Bi2WO6 nanosheets were used to construct a top-gate FET, achieving an on/off ratio as high as 106 and a carrier mobility of 2.4 cm2∙V-1∙s-1. This study also constructed a photodetector that achieved a specific detectivity of up to 3.6 × 1010, a responsivity of 0.779 A·W-1, and an EQE of 218.5%. This research demonstrates that 2D Bi2WO6 holds promise as an ideal material for future electronic and optoelectronic devices. Bi2WO6; 2D Semiconductor; Chemical Vapor Deposition; Field-Effect Transistors; Photodetectors Qu Kairui Li Linyun Chen Xiang Zeng Haibo EMBARGO https://creativecommons.org/licenses/by-nc-nd/4.0/ dataset Science Data Bank