2026-10-12T17:32:51Z https://www.scidb.cn/oai

10.57760/sciencedb.jim.00027 2026-03-20T09:55:23Z

2026-03-20 The data of the article “A Study on the Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-Wall CVD Epitaxial System” doi:10.57760/sciencedb.jim.00027 en This dataset is a numerical simulation data that supports the conclusions and charts of the paper "The Influence of Pressure and Speed on the Growth Rate and Uniformity of Vertical Hot Wall CVD Epitaxial SiC". It includes core data such as SiC epitaxial growth rate, thickness uniformity, reactant molar concentration, and flow field temperature distribution under different reaction chamber pressures (50-450 mbar) and substrate speeds (0-1000 rpm).  Vertical hot-wall CVD; silicon carbide; numerical simulation; reaction pressure; substrate rotation rate Li Xiaolei Qi Xiaofang Ma Wencheng Xu Yongkuan PUBLIC https://creativecommons.org/licenses/by-nc/4.0/ dataset Science Data Bank