2026-10-13T22:08:25Z https://www.scidb.cn/oai

10.57760/sciencedb.space.01488 2024-09-09T11:25:09Z

2024-09-09 The effect of proton irradiation on GaN HEMT doi:10.57760/sciencedb.space.01488 en Proton irradiation can cause degradation of the electrical characteristics of GaN HEMT devices. Proton irradiation experiments were conducted to obtain the influence of different energies and doses of protons on the electrical characteristics of GaN HEMT devices GaN; PROTON; Characteristics Liang Yanan RESTRICTED dataset Science Data Bank