2026-10-14T12:22:45Z https://www.scidb.cn/oai

10.57760/sciencedb.space.02556 2025-03-26T10:01:27Z

2025-03-26 Impact of Temperature on Single-Event Effects in GaN HEMTs doi:10.57760/sciencedb.space.02556 en Experimental investigations on AlGaN/GaN HEMT devices were conducted at 238 K, 298 K, 323 K, and 413 K using the femtosecond pulsed laser single-event effects test facility at the National Space Science Center (NSSC), Chinese Academy of Sciences (CAS). 二维电子气; 温度依赖性; 单粒子烧毁 Ziyu Wang Liang Yanan Rui Chen Jianwei Han Hailong Yu Runjie Yuan Shipeng Shangguan RESTRICTED dataset Science Data Bank