2026-10-14T22:35:56Z https://www.scidb.cn/oai

10.57760/sciencedb.space.02628 2025-04-11T20:20:44Z

2025-04-11 Study on Low-Dose-Rate Irradiation Damage Effects in Through-Silicon Via 3D Interconnect Structures doi:10.57760/sciencedb.space.02628 en Irradiation experiments under both low and high dose rates were conducted on self-designed quasi-coaxial TSV test chips and interdigitated electrode array TSV test chips. The experiments were carried out at the National Space Science Center, Chinese Academy of Sciences (using a ⁹⁰Sr β source with a dose rate of 0.1 rad(Si)/s), and at the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (using a ⁶⁰Co γ source with a dose rate of 300 rad(Si)/s). The total irradiation doses were set at 100, 300, and 500 krad(Si). A network analyzer and a semiconductor parameter analyzer were used to measure the S21 parameters and C–V curves, respectively. The experimental data under the same dose conditions were plotted and comparatively analyzed using Origin software. TSV ; low-dose-rate; radiation 俞海龙 PUBLIC https://creativecommons.org/licenses/by-nc-nd/4.0/ dataset Science Data Bank